type doping中文是什么意思

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中文翻译
造句

型掺杂

type n. 1.型，类型，(工业产品的)品种；风格，型式。 2 ...
dope n. 1.浓液，黏稠物，胶状物；【航空】(涂机翼的)明胶 ...
doping type 掺杂型
n type doping n 型掺杂; 型掺杂
p type doping p 型掺杂
type doping p 型掺杂
doping 半导体中的搀杂质; 掺杂质；加添加剂；上涂料; 掺杂质的搀杂质; 多平; 加入添加剂; 加涂料; 加元素; 禁药; 渗杂质; 使用兴奋剂; 涂布
acceptor doping 受体掺杂; 受主掺杂
arsenic doping 砷掺杂
auto doping 自搀杂
background doping 本底掺杂
blood doping 血液回输技术; 血液兴奋剂
boron doping 掺硼
channel doping 沟道掺杂
contra doping 反掺杂
contra-doping 反掺杂
controlled doping 受控掺杂
counter doping 补偿掺杂
counter-doping 反向掺杂
donor doping 施主掺杂
doping (sport) 兴奋剂
doping accuracy 掺杂精度
doping agent 掺杂剂；添补剂
doping atom 掺杂原子; 杂质原子
doping coil 浸渍线圈

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例句与用法

In this paper we mainly study preparation , properties and n - type doping of cubic boron nitride thin films
本文主要研究立方氮化硼的制备、性质和n型掺杂等内容。
High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap衬底上，本征型和n型al掺杂zns基单晶薄膜的分子束外延生长，获得了高质量的单晶外延薄膜。
The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion . 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting
6文章还对立方氨化硼薄膜的成核和生长机理，氮化硼薄膜的n型掺杂机制和bn型）侣i …型）异质结的电流输运机制进行了探讨。
The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type . the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon
本论文的主要内容和结果如下: ( 1 )借用“热中子辐照硅片使部分硅嬗变为磷,从而将硅掺杂成n型”的思想,从质子嬗变角度讨论了实现zno材料的p型掺杂方案。
It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated . the particle distributions of s , s + and ar + are gotten . the result has important reference to the investigation of n - type diamond film doping at low temperature
( 3 )对不同气压、偏压和不同的配比情况下n型硫掺杂的金刚石薄膜的动力学过程进行了模拟，得出了掺杂元素s和s ~ +以及惰性气体ar ~ +的粒子数分布，计算结果对掺杂过程的研究有重要的参考价值。
In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators . firstly , we presented reseached and development of solar cells in china and foreign countries ; secondly , on the basis of fundamental priciples and theories , we discussed some factors of influcing conversion efficiency of solar cells , and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed , the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied , and some questions on epitaxy growth ( such as crystal qualities , interface stress , element interdiffusion , n - and p - type doping et all ) were solved ; after that , the cell fabrication process was described ; finally , we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma , designed and fixed new solar concentrators
本文致力于用自制的低压mocvd装置进行cainp _ 2 / gaas / ge空间用高效级联太阳能电池制作的工艺以及聚光太阳能电池组件的研究。首先，介绍了国内外太阳能电池的研究现状及应用情况；其次，运用太阳能电池基本原理讨论影响电池转换效率的因素，分析了级联电池的伏安特性；随后，讨论了cainp _ 2 / gaas / ge双结级联电池的结构设计理念，研究了采用低压mocvd技术生长cainp _ 2 / gaas / ge级联太阳电池材料的工艺过程，解决了异质材料生长的结晶质量、界面应力、材料互扩散以及材料n 、 p型掺杂等一系列问题；然后总结了级联电池的后工艺制作；最后，研究了以pmma为材料的菲涅耳线聚焦透镜的热压成型工艺及其模具的加工工艺，设计并安装完成新型聚光太阳能电池组件。
Then we grew the material with different active layer growth temperature , different v / ratio , different doping concentration and form . after that , we tested these materials by photoluminescence ( pl ) technology , and got the best growth condition according to the results of photoluminescence spectra . our result was that the active layer growth temperature was 700 , v / ratio was 60 , waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm , p - type doping with dmzn from 90sccm to 490sccm )
然后在不同的有源区生长温度、 /比、掺杂方式及浓度情况下对激光器材料进行外延生长，并利用光荧光( pl )技术对不同生长条件下外延材料的光致发光特性进行了测试对比，结果表明在下列条件下生长出来的材料具有更好的光学和电学性能：有源区生长温度在700 、波导层/比选择为60 、 n型波导渐变掺杂190sccm - 590sccm的sih _ 4 、 p型波导渐变掺杂90sccm - 490sccm的dmzn 。
It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials , however , for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little . 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas , we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films , and bn ( n - type ) / si ( p - type ) heterojunctions were prepared
5实现了氮化硼薄膜的n型掺杂，成功制备出bn型）乃…型）异质结并且首次系统研究了其卜v和cv特性我们用射频溅射法溅射六角氨化硼靶，在工作气体氮和氮中混入s ，沉积氮化硼薄膜，以研究氮化硼薄膜的n型掺杂，并得到bnh型）侣i …型）异质结。
Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools , electronic and optical devices , etc . because c - bn possesses excellent physical and chemical properties , such as ultrahigh hardness only inferior to diamond , inertness against oxidation at high temperature , uneasy reaction with iron group metal , as well as the possibility of using as n - and p - type doped semiconductors
立方氮化硼( c - bn )具有优异的物理化学性质,如仅次于金刚石的硬度、高温下强的抗氧化能力、不易与铁族金属反应、可n型掺杂也可p型掺杂成为半导体等,立方氮化硼( c - bn )薄膜在切削刀具、电子和光学器件等方面有着潜在的重要应用前景。
Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools , electronic and optical devices , etc . , because cbn possesses excellent physical and chemical properties , such as ultrahigh hardness only inferior to diamond , inertness against oxidation at high temperature , uneasy reaction with iron group metal , as well as the possibility of using as n - and p - type doped semiconductors
立方氮化硼( cbn )具有优异的物理化学性质,如仅次于金刚石的硬度、高温下强的抗氧化能力、不易与铁族金属反应、可n型掺杂也可p型掺杂成为半导体等,立方氮化硼( cbn )薄膜在切削刀具、电子和光学器件等方面有着潜在的重要应用前景。